TIP112TU

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Mfr.Part #
TIP112TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 2A TO220-3
Stock
47,190
In Stock :
47,190

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Through Hole
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
Published :
2008
Voltage - Rated DC :
100V
Power Dissipation :
2W
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
100V
Packaging :
Tube
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 1A 4V
Collector Emitter Saturation Voltage :
2.5V
Current - Collector Cutoff (Max) :
2mA
Package / Case :
TO-220-3
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Transistor Element Material :
SILICON
Terminal Finish :
Tin (Sn)
Mounting Type :
Through Hole
Lead Free :
Lead Free
hFE Min :
500
REACH SVHC :
No SVHC
Pbfree Code :
yes
Factory Lead Time :
6 Weeks
Base Part Number :
TIP112
Max Collector Current :
2A
Weight :
1.214g
ECCN Code :
EAR99
Polarity :
NPN
Width :
4.83mm
Radiation Hardening :
No
Max Power Dissipation :
50W
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-220AB
Number of Pins :
3
Height :
16.51mm
JESD-609 Code :
e3
Length :
10.67mm
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN - Darlington
Current Rating :
2A
Collector Emitter Breakdown Voltage :
100V
Number of Elements :
1
Operating Temperature :
150°C TJ
Collector Base Voltage (VCBO) :
100V
Datasheets
TIP112TU
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP112TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Base Part Number:TIP112, Number of Pins:3, Operating Temperature:150°C TJ, TIP112TU pinout, TIP112TU datasheet PDF, TIP112TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP112TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP112TU


NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP112TU Overview


This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.

TIP112TU Features


the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


TIP112TU Applications


There are a lot of ON Semiconductor
TIP112TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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