TIP112G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

1999

Transition Frequency :

25MHz

Contact Plating :

Tin

Continuous Collector Current :

2A

Pin Count :

3

Package / Case :

TO-220-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 1A 4V

Surface Mount :

No

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Radiation Hardening :

No

Case Connection :

COLLECTOR

Height :

15.75mm

Number of Terminations :

3

Lead Free :

Lead Free

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

50W

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

100V

hFE Min :

1000

Base Part Number :

TIP11*

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Collector Current :

2A

Polarity :

NPN

Length :

10.28mm

Number of Elements :

1

Collector Emitter Saturation Voltage :

2.5V

JEDEC-95 Code :

TO-220AB

Current Rating :

2A

Width :

4.82mm

Transistor Type :

NPN - Darlington

Power Dissipation :

2W

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

2mA

Packaging :

Tube

Factory Lead Time :

2 Weeks

Voltage - Rated DC :

100V

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 8mA, 2A

Collector Emitter Voltage (VCEO) :

100V