TIP112 TIN/LEAD
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- Mfr.Part #
- TIP112 TIN/LEAD
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V TO220-3
- Stock
- 38,541
- In Stock ：
- 38,541
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 14 Weeks
- Reach Compliance Code :
- not_compliant
- Frequency - Transition :
- 25MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2017
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- TIP112 TIN/LEAD
NPN - Darlington -65°C~150°C TJ TO-220-3 Bulk Through Hole
TIP112 TIN/LEAD Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 1A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 8mA, 2A.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.
TIP112 TIN/LEAD Features
the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A
TIP112 TIN/LEAD Applications
There are a lot of Central Semiconductor Corp
TIP112 TIN/LEAD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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