TIP112

Manufacturer :

Harris Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

JESD-609 Code :

e3

hFE Min :

500

JEDEC-95 Code :

TO-220AB

Collector Emitter Breakdown Voltage :

100V

Element Configuration :

Single

Packaging :

Tube

REACH SVHC :

No SVHC

Voltage - Rated DC :

100V

Max Power Dissipation :

2W

Lead Free :

Lead Free

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

100V

Height :

19.68mm

Pin Count :

3

Width :

4.6mm

Polarity :

NPN

Collector Base Voltage (VCBO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.000006g

Number of Elements :

1

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

3

Transistor Application :

SWITCHING

Manufacturer Package Identifier :

TO-220-P011

Radiation Hardening :

No

Power Dissipation :

2W

Collector Emitter Saturation Voltage :

2.5V

Mount :

Through Hole

Base Part Number :

TIP112

Max Collector Current :

2A

Length :

10.4mm

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 8mA, 2A

Package / Case :

TO-220-3

Current Rating :

2A

Current - Collector Cutoff (Max) :

2mA

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Operating Temperature :

150°C TJ

Transistor Type :

NPN - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 1A 4V

Mounting Type :

Through Hole