TIP111TU

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Mfr.Part #
TIP111TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 2A TO220-3
Stock
38,896
In Stock :
38,896

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Tin (Sn)
hFE Min :
500
Max Collector Current :
2A
Polarity :
NPN
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Width :
4.83mm
Element Configuration :
Single
Mounting Type :
Through Hole
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 1A 4V
Length :
10.67mm
Published :
2008
Collector Emitter Saturation Voltage :
2.5V
Weight :
1.214g
ECCN Code :
EAR99
Pbfree Code :
yes
Lead Free :
Lead Free
Current Rating :
2A
Current - Collector Cutoff (Max) :
2mA
Height :
16.51mm
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
80V
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
2 Weeks
JEDEC-95 Code :
TO-220AB
Radiation Hardening :
No
Number of Pins :
3
Transistor Type :
NPN - Darlington
Collector Emitter Voltage (VCEO) :
80V
Collector Base Voltage (VCBO) :
80V
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Voltage - Rated DC :
80V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
Base Part Number :
TIP111
Transistor Element Material :
SILICON
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Package / Case :
TO-220-3
Max Power Dissipation :
2W
Datasheets
TIP111TU
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP111TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:TIP111, Number of Terminations:3, Package / Case:TO-220-3, TIP111TU pinout, TIP111TU datasheet PDF, TIP111TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP111TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP111TU


NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP111TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 2A volts.

TIP111TU Features


the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


TIP111TU Applications


There are a lot of ON Semiconductor
TIP111TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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