TIP111

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Mfr.Part #
TIP111
Manufacturer
Central Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 2A TO220-3
Stock
7,373
In Stock :
7,373

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Number of Pins :
3
Weight :
1.214g
Element Configuration :
Single
Pbfree Code :
yes
JESD-609 Code :
e3
Current Rating :
2A
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 1A 4V
Max Collector Current :
2A
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
80V
Length :
10.67mm
Collector Emitter Saturation Voltage :
2.5V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Collector Emitter Breakdown Voltage :
80V
Transistor Type :
NPN - Darlington
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Current - Collector Cutoff (Max) :
2mA
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
Package / Case :
TO-220-3
Factory Lead Time :
2 Weeks
Packaging :
Tube
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Lead Free :
Lead Free
Number of Terminations :
3
Operating Temperature :
150°C TJ
hFE Min :
500
Radiation Hardening :
No
Max Power Dissipation :
2W
Mount :
Through Hole
Height :
16.51mm
Published :
2008
Width :
4.83mm
Emitter Base Voltage (VEBO) :
5V
Voltage - Rated DC :
80V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
TIP111
Polarity :
NPN
Collector Base Voltage (VCBO) :
80V
Datasheets
TIP111
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor TIP111 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, Base Part Number:TIP111, TIP111 pinout, TIP111 datasheet PDF, TIP111 amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor TIP111 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Central Semiconductor TIP111


NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP111TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 2A volts.

TIP111TU Features


the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


TIP111TU Applications


There are a lot of ON Semiconductor
TIP111TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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