TIP110TU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 8mA, 2A

hFE Min :

500

Collector Emitter Voltage (VCEO) :

60V

Number of Pins :

3

Element Configuration :

Single

Max Power Dissipation :

50W

Collector Base Voltage (VCBO) :

60V

Length :

10.67mm

Height :

9.4mm

Power Dissipation :

2W

Number of Terminations :

3

Max Collector Current :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN - Darlington

Transistor Element Material :

SILICON

Factory Lead Time :

2 Weeks

REACH SVHC :

No SVHC

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

60V

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

2.5V

Terminal Finish :

Tin (Sn)

Width :

4.83mm

Package / Case :

TO-220-3

Number of Elements :

1

Published :

2008

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Current - Collector Cutoff (Max) :

2mA

Weight :

1.214g

Mounting Type :

Through Hole

Polarity :

NPN

Lead Free :

Lead Free

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

100V

Packaging :

Tube

Base Part Number :

TIP110

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 1A 4V

Voltage - Rated DC :

-100V

Emitter Base Voltage (VEBO) :

5V

Current Rating :

2A

Mount :

Through Hole