TIP110
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- Mfr.Part #
- TIP110
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V TO220-3
- Stock
- 588
- In Stock ：
- 588
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 2mA
- hFE Min :
- 1000
- Weight :
- 4.535924g
- Surface Mount :
- No
- Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Max Power Dissipation :
- 2W
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Length :
- 10.2616mm
- Collector Emitter Breakdown Voltage :
- 60V
- Continuous Collector Current :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 15.748mm
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 2.5V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Polarity :
- NPN
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 60V
- Transistor Type :
- NPN - Darlington
- Base Part Number :
- TIP11*
- Operating Temperature :
- -65°C~150°C TJ
- Current Rating :
- 2A
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 60V
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 1999
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Width :
- 4.826mm
- Datasheets
- TIP110
NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP110G Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.
TIP110G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
TIP110G Applications
There are a lot of ON Semiconductor
TIP110G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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