TIP110
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- Mfr.Part #
- TIP110
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 2A TO220
- Stock
- 12,873
- In Stock ：
- 12,873
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 2W
- Base Part Number :
- TIP11*
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- 60V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 4.826mm
- Length :
- 10.2616mm
- Max Collector Current :
- 2A
- Case Connection :
- COLLECTOR
- Published :
- 1999
- Polarity :
- NPN
- Current Rating :
- 2A
- Collector Emitter Saturation Voltage :
- 2.5V
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Continuous Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 1000
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Terminations :
- 3
- Surface Mount :
- No
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 2mA
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 15.748mm
- Max Power Dissipation :
- 2W
- Element Configuration :
- Single
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Datasheets
- TIP110
NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP110G Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 8mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 2A volts is possible.
TIP110G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
TIP110G Applications
There are a lot of ON Semiconductor
TIP110G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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