TIP107TU

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Mfr.Part #
TIP107TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 100V 8A TO220-3
Stock
27,609
In Stock :
27,609

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
6 Weeks
Max Power Dissipation :
80W
Transistor Type :
PNP - Darlington
Operating Temperature :
150°C TJ
Number of Pins :
3
Collector Emitter Breakdown Voltage :
100V
Weight :
1.214g
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Published :
2008
Number of Elements :
1
Power Dissipation :
2W
Collector Emitter Voltage (VCEO) :
100V
Packaging :
Tube
Emitter Base Voltage (VEBO) :
-5V
Height :
16.51mm
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
50μA
Width :
4.83mm
Length :
10.67mm
REACH SVHC :
No SVHC
Max Collector Current :
8A
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Voltage - Rated DC :
-100V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Polarity :
PNP
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
hFE Min :
1000
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Collector Base Voltage (VCBO) :
-100V
Number of Terminations :
3
RoHS Status :
RoHS Compliant
Pbfree Code :
yes
Current Rating :
-8A
JEDEC-95 Code :
TO-220AB
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
2V
Datasheets
TIP107TU
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP107TU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, TIP107TU pinout, TIP107TU datasheet PDF, TIP107TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP107TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP107TU


PNP - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP107TU Overview


This device has a DC current gain of 1000 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2.5V @ 80mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 8A volts is possible.

TIP107TU Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A


TIP107TU Applications


There are a lot of ON Semiconductor
TIP107TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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