TIP107G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

2V

Transistor Type :

PNP - Darlington

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Collector Emitter Voltage (VCEO) :

100V

Radiation Hardening :

No

Voltage - Rated DC :

-100V

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 4V

Mounting Type :

Through Hole

Pin Count :

3

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Case Connection :

COLLECTOR

Width :

4.82mm

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

4.535924g

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 80mA, 8A

Max Collector Current :

8A

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Number of Elements :

1

Length :

10.28mm

REACH SVHC :

No SVHC

Published :

2004

Current Rating :

-8A

Max Power Dissipation :

2W

Operating Temperature :

-65°C~150°C TJ

Factory Lead Time :

8 Weeks

Element Configuration :

Single

JESD-609 Code :

e3

Package / Case :

TO-220-3

Polarity :

PNP

Current - Collector Cutoff (Max) :

50μA

Number of Pins :

3

Transistor Element Material :

SILICON

Power Dissipation :

2W

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

100V

Height :

9.28mm

Emitter Base Voltage (VEBO) :

5V

Pbfree Code :

yes

hFE Min :

200

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

4MHz

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

100V

Base Part Number :

TIP10*