TIP106G

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Mfr.Part #
TIP106G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 80V 8A TO220
Stock
1,932
In Stock :
1,932

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
JEDEC-95 Code :
TO-220AB
Pbfree Code :
yes
REACH SVHC :
No SVHC
Surface Mount :
No
Base Part Number :
TIP10*
Operating Temperature :
-65°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Height :
6.35mm
Collector Emitter Saturation Voltage :
2V
Current Rating :
-8A
Emitter Base Voltage (VEBO) :
5V
Element Configuration :
Single
Factory Lead Time :
2 Weeks
Collector Emitter Breakdown Voltage :
80V
Max Collector Current :
8A
Weight :
4.535924g
Length :
6.35mm
Current - Collector Cutoff (Max) :
50μA
Transistor Type :
PNP - Darlington
hFE Min :
200
Radiation Hardening :
No
Voltage - Rated DC :
-80V
Collector Emitter Voltage (VCEO) :
80V
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Collector Base Voltage (VCBO) :
80V
Transistor Application :
AMPLIFIER
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Number of Pins :
3
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Case Connection :
COLLECTOR
Max Power Dissipation :
2W
ECCN Code :
EAR99
Power Dissipation :
2W
Number of Elements :
1
Published :
2001
Number of Terminations :
3
Width :
25.4mm
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Terminal Finish :
Tin (Sn)
Package / Case :
TO-220-3
Time@Peak Reflow Temperature-Max (s) :
40
Polarity :
PNP
Datasheets
TIP106G
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP106G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:TIP10*, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, TIP106G pinout, TIP106G datasheet PDF, TIP106G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP106G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP106G


PNP - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP106G Overview


This device has a DC current gain of 1000 @ 3A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.The maximum collector current is 8A volts.

TIP106G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A


TIP106G Applications


There are a lot of ON Semiconductor
TIP106G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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