SUP75P05-08-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation :

250W

Nominal Vgs :

-2 V

Pbfree Code :

yes

FET Type :

P-Channel

Series :

TrenchFET®

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Drain-source On Resistance-Max :

0.008Ohm

Mounting Type :

Through Hole

Pin Count :

3

Threshold Voltage :

-2V

Height :

9.01mm

Case Connection :

DRAIN

Mount :

Through Hole

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

-75A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

175 ns

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

8500pF @ 25V

Width :

4.7mm

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

3.7W Ta 250W Tc

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Number of Elements :

1

Number of Terminations :

3

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Element Configuration :

Single

Turn-Off Delay Time :

115 ns

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Length :

10.41mm

Rise Time :

140ns

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

240A