SUP70060E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 30A, 10V

Avalanche Energy Rating (Eas) :

125 mJ

ECCN Code :

EAR99

FET Type :

N-Channel

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

240A

Input Capacitance (Ciss) (Max) @ Vds :

3330pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

131A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Mounting Type :

Through Hole

Power Dissipation-Max :

200W Tc

Number of Terminations :

3

Published :

2017

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Series :

ThunderFET®

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.0064Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Packaging :

Bulk

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

100V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

131A Tc

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB