SUP70N03-09BP-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Nominal Vgs :

800 mV

Turn-Off Delay Time :

25 ns

Series :

TrenchFET®

Vgs (Max) :

±20V

Rise Time :

8ns

Drain-source On Resistance-Max :

0.009Ohm

Drain Current-Max (Abs) (ID) :

70A

Turn On Delay Time :

10 ns

Fall Time (Typ) :

9 ns

FET Type :

N-Channel

Transistor Application :

SWITCHING

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

93W

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 5V

Power Dissipation-Max :

93W Tc

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Terminations :

3

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Pulsed Drain Current-Max (IDM) :

200A

Number of Elements :

1

Mount :

Through Hole

Continuous Drain Current (ID) :

50A

REACH SVHC :

Unknown

Element Configuration :

Single

Transistor Element Material :

SILICON

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA