SUP70090E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 50V

Power Dissipation-Max :

125W Tc

RoHS Status :

ROHS3 Compliant

Published :

2017

Drain-source On Resistance-Max :

0.0089Ohm

DS Breakdown Voltage-Min :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Pulsed Drain Current-Max (IDM) :

120A

Factory Lead Time :

14 Weeks

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 20A, 10V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Terminal Position :

Single

Continuous Drain Current (ID) :

50A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Mount :

Through Hole

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Elements :

1

Series :

ThunderFET®

Avalanche Energy Rating (Eas) :

80 mJ

Drain to Source Voltage (Vdss) :

100V

Packaging :

Bulk

Number of Terminations :

3

Vgs (Max) :

±20V

Mounting Type :

Through Hole