SUP70101EL-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 50V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

20 ns

Terminal Finish :

Tin (Sn)

Power Dissipation :

375W

Continuous Drain Current (ID) :

-120A

Moisture Sensitivity Level (MSL) :

Not Applicable

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

110 ns

Factory Lead Time :

14 Weeks

Drain to Source Resistance :

8.1mOhm

Drain to Source Voltage (Vdss) :

100V

Height :

19.31mm

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

175°C

Series :

TrenchFET®

Number of Channels :

1

Power Dissipation-Max :

375W Tc

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain to Source Breakdown Voltage :

-100V