STY145N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Length :

15.9mm

Gate Charge (Qg) (Max) @ Vgs :

414nC @ 10V

Width :

5.3mm

Height :

20.3mm

FET Type :

N-Channel

Power Dissipation-Max :

625W Tc

Series :

MDmesh™ V

Current - Continuous Drain (Id) @ 25°C :

138A Tc

Drain to Source Voltage (Vdss) :

650V

Drain to Source Breakdown Voltage :

710V

Rise Time :

11ns

Element Configuration :

Single

Fall Time (Typ) :

82 ns

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

18500pF @ 100V

Package / Case :

TO-247-3

Power Dissipation :

625W

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

2420 mJ

Factory Lead Time :

12 Weeks

Mount :

Through Hole

Mounting Type :

Through Hole

Base Part Number :

STY145

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

255 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

88 ns

Number of Terminations :

3

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

15m Ω @ 69A, 10V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

247

Continuous Drain Current (ID) :

138A

Pulsed Drain Current-Max (IDM) :

552A