STY105NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

110A

Power Dissipation :

625W

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Drain to Source Voltage (Vdss) :

500V

Resistance :

22mOhm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

22m Ω @ 52A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Vgs (Max) :

±25V

Turn On Delay Time :

47 ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

326nC @ 10V

Turn-Off Delay Time :

353 ns

Series :

MDmesh™ II

Number of Elements :

1

Power Dissipation-Max :

625W Tc

Gate to Source Voltage (Vgs) :

25V

Lead Free :

Lead Free

Rise Time :

88ns

Fall Time (Typ) :

70 ns

Radiation Hardening :

No

Packaging :

Tube

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

9600pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Pins :

247

Base Part Number :

STY105

Package / Case :

TO-247-3

Mount :

Through Hole