STY100NS20FD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Rise Time :

140ns

Number of Pins :

247

Power Dissipation :

450W

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

140 ns

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain to Source Breakdown Voltage :

200V

Power Dissipation-Max :

450W Tc

Pin Count :

3

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

24m Ω @ 50A, 10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

JESD-30 Code :

R-PSIP-T3

Series :

MESH OVERLAY™

Base Part Number :

STY100

Package / Case :

TO-247-3

Packaging :

Tube

Current Rating :

100A

Pulsed Drain Current-Max (IDM) :

400A

Continuous Drain Current (ID) :

100A

Number of Elements :

1

Avalanche Energy Rating (Eas) :

750 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.024Ohm

FET Type :

N-Channel

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Mount :

Through Hole

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

42 ns

Vgs(th) (Max) @ Id :

4V @ 250µA