STY140NS10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Vgs (Max) :

±20V

Element Configuration :

Single

ECCN Code :

EAR99

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

11m Ω @ 70A, 10V

Gate Charge (Qg) (Max) @ Vgs :

600nC @ 10V

Rise Time :

150ns

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Avalanche Energy Rating (Eas) :

2900 mJ

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Pins :

247

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Continuous Drain Current (ID) :

140A

REACH SVHC :

No SVHC

Number of Elements :

1

Package / Case :

TO-247-3

Packaging :

Tube

Series :

MESH OVERLAY™

Reach Compliance Code :

not_compliant

Base Part Number :

STY140

Current Rating :

140A

Lead Free :

Lead Free

Power Dissipation-Max :

450W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

450W

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

560A

Input Capacitance (Ciss) (Max) @ Vds :

12600pF @ 25V

Mount :

Through Hole

Transistor Element Material :

SILICON

Fall Time (Typ) :

270 ns

Threshold Voltage :

4V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

100V

Drain to Source Breakdown Voltage :

100V