STY112N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Mounting Type :

Through Hole

Power Dissipation :

625W

Turn-Off Delay Time :

53 ns

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

710V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

22m Ω @ 47A, 10V

Mount :

Through Hole

Continuous Drain Current (ID) :

96A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Fall Time (Typ) :

140 ns

Current - Continuous Drain (Id) @ 25°C :

96A Tc

FET Type :

N-Channel

Base Part Number :

STY112

Drain to Source Voltage (Vdss) :

650V

Packaging :

Tube

Turn On Delay Time :

267 ns

Input Capacitance (Ciss) (Max) @ Vds :

16870pF @ 100V

JESD-609 Code :

e3

Additional Feature :

AVALANCHE ENERGY RATED

Vgs (Max) :

±25V

Resistance :

22mOhm

Series :

MDmesh™ V

Transistor Element Material :

SILICON

Power Dissipation-Max :

625W Tc

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Length :

5.9mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Width :

5.3mm

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Rise Time :

79ns

Gate to Source Voltage (Vgs) :

25V

Height :

20.3mm

Number of Elements :

1

Lead Free :

Lead Free

Number of Terminations :

3

Pin Count :

3