STW6N95K5
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- Mfr.Part #
- STW6N95K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 9A TO247-3
- Stock
- 188
- In Stock ：
- 188
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 21 ns
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 12 ns
- Continuous Drain Current (ID) :
- 9A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Resistance :
- 1.25Ohm
- Turn-Off Delay Time :
- 33 ns
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Radiation Hardening :
- No
- Power Dissipation :
- 90W
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 30V
- Base Part Number :
- STW6N
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Rds On (Max) @ Id, Vgs :
- 1.25 Ω @ 3A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Drain to Source Breakdown Voltage :
- 950V
- Vgs (Max) :
- ±30V
- Series :
- SuperMESH5™
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 9A
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 36A
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 90W Tc
- Rise Time :
- 12ns
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 100V
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 17 Weeks
- JESD-609 Code :
- e3
- Datasheets
- STW6N95K5
N-Channel Tube 1.25 Ω @ 3A, 10V ±30V 450pF @ 100V 13nC @ 10V TO-247-3
STW6N95K5 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 90 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 100V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.Using VGS=950V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 950V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 36A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STW6N95K5 Features
the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 950V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 36A.
STW6N95K5 Applications
There are a lot of STMicroelectronics
STW6N95K5 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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