STW62N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Element Configuration :

Single

Drain-source On Resistance-Max :

0.049Ohm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

142nC @ 10V

Base Part Number :

STW62N

Drain to Source Breakdown Voltage :

710V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

8 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Height :

20.15mm

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

46A

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Rds On (Max) @ Id, Vgs :

49m Ω @ 23A, 10V

Power Dissipation-Max :

330W Tc

Power Dissipation :

330W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

6420pF @ 100V

Packaging :

Tube

Length :

15.75mm

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±25V

Number of Pins :

3

Number of Elements :

1

Width :

5.15mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101, MDmesh™ V

Rise Time :

11ns

Drain to Source Voltage (Vdss) :

650V

Fall Time (Typ) :

14 ns

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Mount :

Through Hole

Number of Terminations :

3

Turn On Delay Time :

101 ns

Factory Lead Time :

17 Weeks