STW60N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

16 ns

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

59m Ω @ 23A, 10V

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

Mount :

Through Hole

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

6810pF @ 100V

Threshold Voltage :

4V

Length :

15.75mm

Radiation Hardening :

No

Height :

20.15mm

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Power Dissipation-Max :

255W Tc

ECCN Code :

EAR99

Width :

5.15mm

Resistance :

59mOhm

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

13 ns

Lead Free :

Lead Free

Number of Elements :

1

Turn On Delay Time :

90 ns

Series :

MDmesh™ V

JESD-609 Code :

e3

Additional Feature :

ULTRA-LOW RESISTANCE

Packaging :

Tube

Continuous Drain Current (ID) :

46A

Transistor Application :

SWITCHING

Package / Case :

TO-247-3

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

25V

Drain to Source Breakdown Voltage :

650V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STW60N

Rise Time :

11ns

REACH SVHC :

No SVHC

FET Type :

N-Channel

Number of Pins :

3

Power Dissipation :

255W