STW60NE10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Mount :

Through Hole

Drain to Source Breakdown Voltage :

100V

Power Dissipation-Max :

180W Tc

ECCN Code :

EAR99

Current Rating :

60A

JEDEC-95 Code :

TO-247AC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

45 ns

Avalanche Energy Rating (Eas) :

500 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

180W

Current - Continuous Drain (Id) @ 25°C :

60A Tc

RoHS Status :

Non-RoHS Compliant

Rise Time :

45ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

60A

Terminal Finish :

Tin/Lead (Sn/Pb)

Vgs (Max) :

±20V

JESD-609 Code :

e0

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

22m Ω @ 30A, 10V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Base Part Number :

STW60N

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

STripFET™

Packaging :

Tube

Operating Temperature :

175°C TJ

Drain-source On Resistance-Max :

0.022Ohm

Pin Count :

3

Lead Free :

Contains Lead

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

240A

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

100V