STW60NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

5790pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Rise Time :

36ns

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.043Ohm

Series :

MDmesh™ II

Power Dissipation-Max :

446W Tc

Package / Case :

TO-247-3

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

178nC @ 10V

Pulsed Drain Current-Max (IDM) :

272A

Turn-Off Delay Time :

40 ns

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

Fall Time (Typ) :

27.5 ns

Base Part Number :

STW60N

Continuous Drain Current (ID) :

68A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Power Dissipation :

446W

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

68A Tc

Rds On (Max) @ Id, Vgs :

43m Ω @ 34A, 10V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

551 mJ

Drain to Source Breakdown Voltage :

500V