STU8NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 50V

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

700m Ω @ 3.5A, 10V

Drain-source On Resistance-Max :

0.7Ohm

Pulsed Drain Current-Max (IDM) :

28A

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Number of Terminations :

3

Pin Count :

3

Continuous Drain Current (ID) :

7A

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

FET Type :

N-Channel

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Avalanche Energy Rating (Eas) :

200 mJ

Mount :

Through Hole

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Fall Time (Typ) :

22 ns

Element Configuration :

Single

Number of Pins :

3

Turn-Off Delay Time :

37 ns

Drain to Source Breakdown Voltage :

600V

Qualification Status :

Not Qualified

Rise Time :

22ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STU8N

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

70W Tc

Drain Current-Max (Abs) (ID) :

7A

Power Dissipation :

70W

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Series :

FDmesh™ II

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant