STU8NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

790m Ω @ 2.5A, 10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

140 mJ

Transistor Element Material :

SILICON

Series :

MDmesh™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

5A

Power Dissipation-Max :

45W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Base Part Number :

STU8N

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

500V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Height :

6.9mm

Gate to Source Voltage (Vgs) :

25V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.79Ohm

Length :

6.6mm

Width :

2.4mm

Radiation Hardening :

No

Turn-Off Delay Time :

25 ns

Vgs (Max) :

±25V

FET Type :

N-Channel

Mounting Type :

Through Hole

Packaging :

Tube

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

364pF @ 50V

Pulsed Drain Current-Max (IDM) :

20A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rise Time :

4.4ns

Drain to Source Voltage (Vdss) :

500V

ECCN Code :

EAR99

Pbfree Code :

yes

Turn On Delay Time :

7 ns

Transistor Application :

SWITCHING

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

8.8 ns

Continuous Drain Current (ID) :

5A

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Threshold Voltage :

3V

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1