STU8N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

11 ns

Mounting Type :

Through Hole

Power Dissipation :

70W

Width :

2.4mm

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Drain-source On Resistance-Max :

0.6Ohm

Packaging :

Tube

Pin Count :

3

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Element Configuration :

Single

Number of Elements :

1

Continuous Drain Current (ID) :

7A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 100V

Additional Feature :

ULTRA-LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

50 ns

Length :

6.6mm

Radiation Hardening :

No

Base Part Number :

STU8N

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

14ns

Turn On Delay Time :

50 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

70W Tc

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

7A

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

MDmesh™ V

Vgs (Max) :

±25V

Height :

6.9mm

Drain to Source Breakdown Voltage :

650V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Threshold Voltage :

4V

Pulsed Drain Current-Max (IDM) :

28A