STU80N4F6
- Mfr.Part #
- STU80N4F6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A TO251
- Stock
- 2,260
- In Stock :
- 2,260
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 6.3m Ω @ 40A, 10V
- Series :
- DeepGATE™, STripFET™ VI
- Turn-Off Delay Time :
- 46.1 ns
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 11.9 ns
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 40V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 6.6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 10.5 ns
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Power Dissipation-Max :
- 70W Tc
- Base Part Number :
- STU80
- Continuous Drain Current (ID) :
- 80A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2150pF @ 25V
- Width :
- 2.4mm
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 6.2mm
- Packaging :
- Tube
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Rise Time :
- 7.6ns
- Datasheets
- STU80N4F6

N-Channel Tube 6.3m Ω @ 40A, 10V ±20V 2150pF @ 25V 36nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU80N4F6 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2150pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 46.1 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STU80N4F6 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 46.1 ns
STU80N4F6 Applications
There are a lot of STMicroelectronics
STU80N4F6 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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