STU8N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Base Part Number :

STU8N

Pulsed Drain Current-Max (IDM) :

24A

Drain to Source Breakdown Voltage :

800V

Number of Elements :

1

Vgs (Max) :

±30V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Width :

2.4mm

Fall Time (Typ) :

20 ns

Rds On (Max) @ Id, Vgs :

950m Ω @ 3A, 10V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Number of Pins :

3

Turn-Off Delay Time :

32 ns

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Drain Current-Max (Abs) (ID) :

6A

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

110W Tc

Power Dissipation :

110W

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 100µA

Continuous Drain Current (ID) :

6A

Factory Lead Time :

17 Weeks

Length :

6.6mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

12 ns

Rise Time :

14ns

Case Connection :

DRAIN

Element Configuration :

Single

Series :

SuperMESH5™

Number of Terminations :

3

Height :

6.2mm

Drain-source On Resistance-Max :

0.95Ohm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 100V

RoHS Status :

ROHS3 Compliant