STU7NM60N
- Mfr.Part #
- STU7NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A IPAK
- Stock
- 280
- In Stock :
- 280
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 25V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- 150°C TJ
- Vgs (Max) :
- ±25V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Base Part Number :
- STU7N
- Contact Plating :
- Tin
- Power Dissipation-Max :
- 45W Tc
- Drain Current-Max (Abs) (ID) :
- 5A
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 20A
- Rise Time :
- 10ns
- Series :
- MDmesh™ II
- Width :
- 2.4mm
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Resistance :
- 900mOhm
- Drain to Source Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 26 Weeks
- Threshold Voltage :
- 3V
- Length :
- 6.6mm
- Pin Count :
- 3
- Element Configuration :
- Single
- Turn On Delay Time :
- 7 ns
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 363pF @ 50V
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 2.5A, 10V
- Turn-Off Delay Time :
- 26 ns
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Power Dissipation :
- 45W
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Packaging :
- Tube
- Height :
- 6.9mm
- Continuous Drain Current (ID) :
- 5A
- Number of Elements :
- 1
- Fall Time (Typ) :
- 12 ns
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Datasheets
- STU7NM60N

N-Channel Tube 900m Ω @ 2.5A, 10V ±25V 363pF @ 50V 14nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU7NM60N Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 363pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 5A.As a result of its turn-off delay time, which is 26 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 20A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (10V).
STU7NM60N Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 20A.
a threshold voltage of 3V
STU7NM60N Applications
There are a lot of STMicroelectronics
STU7NM60N applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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