STU7N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Rise Time :

8.3ns

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

800V

Avalanche Energy Rating (Eas) :

88 mJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mount :

Through Hole

Number of Pins :

3

Factory Lead Time :

17 Weeks

Length :

6.6mm

Transistor Application :

SWITCHING

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

24A

Case Connection :

DRAIN

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Series :

SuperMESH5™

Vgs(th) (Max) @ Id :

5V @ 100µA

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Continuous Drain Current (ID) :

6A

Power Dissipation-Max :

110W Tc

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

6A

Turn On Delay Time :

11.3 ns

Turn-Off Delay Time :

23.7 ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

20.2 ns

ECCN Code :

EAR99

Mounting Type :

Through Hole

Radiation Hardening :

No

Base Part Number :

STU7N

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

13.4nC @ 10V

Height :

6.2mm

Power Dissipation :

110W

Transistor Element Material :

SILICON

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Width :

2.4mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 100V

Packaging :

Tube