STU7N65M2
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- Mfr.Part #
- STU7N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 5A IPAK
- Stock
- 1,471
- In Stock ：
- 1,471
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs (Max) :
- ±25V
- Threshold Voltage :
- 3V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Weight :
- 3.949996g
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Series :
- MDmesh™
- Turn On Delay Time :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 1.15 Ω @ 2.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Factory Lead Time :
- 26 Weeks
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 5A
- Rise Time :
- 20ns
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Turn-Off Delay Time :
- 30 ns
- Drain to Source Breakdown Voltage :
- 650V
- Fall Time (Typ) :
- 20 ns
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- STU7N
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Resistance :
- 980mOhm
- Power Dissipation-Max :
- 60W Tc
- Datasheets
- STU7N65M2
N-Channel Tube 1.15 Ω @ 2.5A, 10V ±25V 270pF @ 100V 9nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU7N65M2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 270pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
STU7N65M2 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 30 ns
a threshold voltage of 3V
STU7N65M2 Applications
There are a lot of STMicroelectronics
STU7N65M2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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