STU7N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Base Part Number :

STU7N

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 10V

Packaging :

Tube

Rise Time :

7.2ns

Radiation Hardening :

No

Width :

2.4mm

Input Capacitance (Ciss) (Max) @ Vds :

271pF @ 100V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Number of Terminations :

3

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15.9 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

60W

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Turn On Delay Time :

7.6 ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Continuous Drain Current (ID) :

5A

Series :

MDmesh™ II Plus

Turn-Off Delay Time :

19.3 ns

Pulsed Drain Current-Max (IDM) :

20A

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.5A, 10V

Factory Lead Time :

26 Weeks

Drain-source On Resistance-Max :

0.95Ohm

Length :

6.6mm

Power Dissipation-Max :

60W Tc

Number of Channels :

1

Height :

6.2mm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Avalanche Energy Rating (Eas) :

99 mJ

FET Type :

N-Channel