STU6NF10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

6A

Drain to Source Breakdown Voltage :

100V

Avalanche Energy Rating (Eas) :

200 mJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

250m Ω @ 3A, 10V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

6 ns

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Base Part Number :

STU6N

Power Dissipation-Max :

30W Tc

Series :

STripFET™

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Continuous Drain Current (ID) :

6A

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Temperature :

-65°C~175°C TJ

Radiation Hardening :

No

Power Dissipation :

30W

Number of Elements :

1

FET Type :

N-Channel

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Rise Time :

10ns

Drain-source On Resistance-Max :

0.25Ohm

Turn-Off Delay Time :

20 ns

Fall Time (Typ) :

3 ns

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

24A