STU60N3LH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Mount :

Through Hole

FET Type :

N-Channel

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Base Part Number :

STU60N

Power Dissipation :

60W

Height :

6.9mm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Drain to Source Breakdown Voltage :

30V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

Not Applicable

Turn On Delay Time :

6 ns

Width :

2.4mm

Rise Time :

33ns

Additional Feature :

ULTRA-LOW RESISTANCE

Mounting Type :

Through Hole

Length :

6.6mm

Vgs (Max) :

±20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

22V

JESD-609 Code :

e3

Series :

STripFET™ V

Fall Time (Typ) :

4.2 ns

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 24A, 10V

Power Dissipation-Max :

60W Tc

REACH SVHC :

No SVHC

Threshold Voltage :

1.8V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

48A

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 25V

Turn-Off Delay Time :

19 ns

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

24A

Transistor Application :

SWITCHING