STU6N65M2
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- Mfr.Part #
- STU6N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 4A IPAK
- Stock
- 1,071
- In Stock ：
- 1,071
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 1.35 Ω @ 2A, 10V
- Continuous Drain Current (ID) :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STU6N
- Number of Pins :
- 3
- Series :
- MDmesh™
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 26 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 6.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 9.8nC @ 10V
- Drain to Source Breakdown Voltage :
- 650V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Fall Time (Typ) :
- 20 ns
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 226pF @ 100V
- Power Dissipation-Max :
- 60W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 3.949996g
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Threshold Voltage :
- 3V
- Turn On Delay Time :
- 19 ns
- Packaging :
- Tube
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Rise Time :
- 7ns
- Resistance :
- 1.2Ohm
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Datasheets
- STU6N65M2
N-Channel Tube 1.35 Ω @ 2A, 10V ±25V 226pF @ 100V 9.8nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU6N65M2 Overview
A device's maximum input capacitance is 226pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 6.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STU6N65M2 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 6.5 ns
a threshold voltage of 3V
STU6N65M2 Applications
There are a lot of STMicroelectronics
STU6N65M2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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