STU6N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - annealed

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

REACH SVHC :

No SVHC

Series :

SuperMESH3™

Height :

6.9mm

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Number of Pins :

3

Threshold Voltage :

3.75V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.8A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Power Dissipation :

90W

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Radiation Hardening :

No

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

5.5A

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Turn-Off Delay Time :

49 ns

Number of Elements :

1

Fall Time (Typ) :

19 ns

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Length :

6.6mm

Pulsed Drain Current-Max (IDM) :

22A

Rise Time :

12.5ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Width :

2.4mm

Power Dissipation-Max :

90W Tc

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 50V

Additional Feature :

ULTRA LOW-ON RESISTANCE

Base Part Number :

STU6N

Turn On Delay Time :

22 ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

620V

Factory Lead Time :

12 Weeks