STU6N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain to Source Voltage (Vdss) :

600V

Rise Time :

7.4ns

Continuous Drain Current (ID) :

4.5A

Base Part Number :

STU6N

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

9.5 ns

Mount :

Through Hole

Power Dissipation-Max :

60W Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Element Configuration :

Single

Turn-Off Delay Time :

24 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

ECCN Code :

EAR99

Fall Time (Typ) :

22.5 ns

Power Dissipation :

60W

Length :

6.6mm

Number of Pins :

3

Packaging :

Tube

Drain to Source Breakdown Voltage :

650V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Height :

6.2mm

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

232pF @ 100V

Factory Lead Time :

26 Weeks

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.25A, 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.4mm

Series :

MDmesh™ II Plus