STU5N95K5
- Mfr.Part #
- STU5N95K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 3.5A IPAK
- Stock
- 6,816
- In Stock :
- 6,816
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 70W Tc
- DS Breakdown Voltage-Min :
- 950V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 950V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Tc
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 17 Weeks
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 1.5A, 10V
- Packaging :
- Tube
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 14A
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Series :
- MDmesh™ K5
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Avalanche Energy Rating (Eas) :
- 70 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs :
- 12.5nC @ 10V
- Base Part Number :
- STU5N
- Input Capacitance (Ciss) (Max) @ Vds :
- 220pF @ 100V
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 3.5A
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Datasheets
- STU5N95K5
N-Channel Tube 2.5 Ω @ 1.5A, 10V ±30V 220pF @ 100V 12.5nC @ 10V 950V TO-251-3 Short Leads, IPak, TO-251AA
STU5N95K5 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 70 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 220pF @ 100V maximal input capacitance.A device can conduct a maximum continuous current of [3.5A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 14A.The DS breakdown voltage should be maintained above 950V to maintain normal operation.To operate this transistor, you will need a 950V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
STU5N95K5 Features
the avalanche energy rating (Eas) is 70 mJ
based on its rated peak drain current 14A.
a 950V drain to source voltage (Vdss)
STU5N95K5 Applications
There are a lot of STMicroelectronics
STU5N95K5 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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