STU5N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

3.7A

Turn On Delay Time :

11.8 ns

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

80 mJ

Base Part Number :

STU5N

Transistor Element Material :

SILICON

Series :

MDmesh™ II Plus

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

2.4mm

Power Dissipation-Max :

45W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Length :

6.6mm

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 100V

Package / Case :

TO-220-3

Weight :

3.949996g

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.85A, 10V

Height :

6.2mm

Case Connection :

DRAIN

Turn-Off Delay Time :

70 ns

ECCN Code :

EAR99

Number of Terminations :

3

Element Configuration :

Single

Mount :

Through Hole

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

3.7A Tc

Lead Free :

Lead Free

Factory Lead Time :

26 Weeks

Drain to Source Breakdown Voltage :

650V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate to Source Voltage (Vgs) :

25V