STU5N95K3
- Mfr.Part #
- STU5N95K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 4A IPAK
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Factory Lead Time :
- 12 Weeks
- Series :
- SuperMESH3™
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Rise Time :
- 7ns
- Turn-Off Delay Time :
- 32 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Power Dissipation :
- 90W
- Drain Current-Max (Abs) (ID) :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 90W Tc
- Fall Time (Typ) :
- 18 ns
- Length :
- 6.6mm
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Height :
- 6.9mm
- Radiation Hardening :
- No
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Drain to Source Breakdown Voltage :
- 950V
- Turn On Delay Time :
- 17 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 2A, 10V
- Threshold Voltage :
- 4V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Pin Count :
- 3
- Width :
- 2.4mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Base Part Number :
- STU5N
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 4A
- Datasheets
- STU5N95K3

N-Channel Tube 3.5 Ω @ 2A, 10V ±30V 460pF @ 25V 19nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU5N95K3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 460pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 950V, and this device has a drainage-to-source breakdown voltage of 950VV.Drain current refers to the maximum continuous current a device can conduct, and it is 4A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STU5N95K3 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 950V voltage
the turn-off delay time is 32 ns
a threshold voltage of 4V
STU5N95K3 Applications
There are a lot of STMicroelectronics
STU5N95K3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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