STU5N62K3

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Mfr.Part #
STU5N62K3
Manufacturer
STMicroelectronics
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 620V 4.2A IPAK
Stock
5,284
In Stock :
5,284

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
4.2A Tc
Width :
2.4mm
Terminal Finish :
Matte Tin (Sn) - annealed
Factory Lead Time :
12 Weeks
Threshold Voltage :
3.75V
Lead Free :
Lead Free
Power Dissipation-Max :
70W Tc
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Packaging :
Tube
Mount :
Through Hole
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
16.8A
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Height :
6.9mm
Gate to Source Voltage (Vgs) :
30V
Peak Reflow Temperature (Cel) :
260
Rise Time :
8ns
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
21 ns
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
4.2A
Additional Feature :
ULTRA LOW-ON RESISTANCE
Resistance :
1.6Ohm
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type :
Through Hole
Number of Pins :
3
Turn-Off Delay Time :
40 ns
Input Capacitance (Ciss) (Max) @ Vds :
680pF @ 50V
Rds On (Max) @ Id, Vgs :
1.6 Ω @ 2.1A, 10V
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
620V
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
SuperMESH3™
FET Type :
N-Channel
Turn On Delay Time :
12 ns
Transistor Application :
SWITCHING
Pin Count :
3
Number of Terminations :
3
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Base Part Number :
STU5N
Element Configuration :
Single
Vgs (Max) :
±30V
Power Dissipation :
70W
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
120 mJ
Operating Mode :
ENHANCEMENT MODE
Length :
6.6mm
Datasheets
STU5N62K3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STU5N62K3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Base Part Number:STU5N, Operating Temperature:-55°C~150°C TJ, STU5N62K3 pinout, STU5N62K3 datasheet PDF, STU5N62K3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STU5N62K3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STU5N62K3


N-Channel Tube 1.6 Ω @ 2.1A, 10V ±30V 680pF @ 50V 26nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

STU5N62K3 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 680pF @ 50V.This device conducts a continuous drain current (ID) of 4.2A, which is the maximum continuous current transistor can conduct.Using VGS=620V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 620V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 16.8A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STU5N62K3 Features


the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 16.8A.
a threshold voltage of 3.75V


STU5N62K3 Applications


There are a lot of STMicroelectronics
STU5N62K3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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