STU5N52K3
- Mfr.Part #
- STU5N52K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 525V 4.4A IPAK
- Stock
- 23,201
- In Stock :
- 23,201
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 70W
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Base Part Number :
- STU5N
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 9 ns
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.2A, 10V
- Drain to Source Breakdown Voltage :
- 525V
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 545pF @ 100V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Length :
- 6.6mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Turn-Off Delay Time :
- 29 ns
- Fall Time (Typ) :
- 16 ns
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 4.4A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 70W Tc
- Lead Free :
- Lead Free
- Rise Time :
- 11ns
- Height :
- 6.9mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- SuperMESH3™
- Element Configuration :
- Single
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Width :
- 2.4mm
- Datasheets
- STU5N52K3

N-Channel Tube 1.5 Ω @ 2.2A, 10V ±30V 545pF @ 100V 17nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STU5N52K3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 545pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.4A amps.In this device, the drain-source breakdown voltage is 525V and VGS=525V, so the drain-source breakdown voltage is 525V in this case.It is [29 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STU5N52K3 Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 29 ns
STU5N52K3 Applications
There are a lot of STMicroelectronics
STU5N52K3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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