STS9D8NH3LL

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

150 mJ

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

8A 9A

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

8A

JESD-609 Code :

e4

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

22m Ω @ 4A, 10V

Pin Count :

8

Base Part Number :

STS9D8

Rise Time :

32ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

2W

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Mount :

Surface Mount

Resistance :

22mOhm

Mounting Type :

Surface Mount

Series :

STripFET™

Gate to Source Voltage (Vgs) :

16V

Power Dissipation :

2W

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Transistor Application :

SWITCHING

Fall Time (Typ) :

8.5 ns

Turn-Off Delay Time :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

857pF @ 25V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

9A

Terminal Form :

Gull wing

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

1V @ 250μA

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)