STS9NF30L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Fall Time (Typ) :

24 ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Vgs(th) (Max) @ Id :

1V @ 250μA

Vgs (Max) :

±18V

Packaging :

Tape and Reel (TR)

Current Rating :

9A

Drain-source On Resistance-Max :

0.035Ohm

Number of Terminations :

8

Qualification Status :

Not Qualified

Power Dissipation-Max :

2.5W Tc

JESD-609 Code :

e4

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

9A

Base Part Number :

STS9NF

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Gate to Source Voltage (Vgs) :

18V

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 25V

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

36A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

20m Ω @ 4.5A, 10V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Turn-Off Delay Time :

38 ns

Rise Time :

80ns

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

2.5W

Series :

STripFET™ II

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

9A

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 4.5V

Voltage - Rated DC :

30V