STS9NH3LL

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

STripFET™ III

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Pulsed Drain Current-Max (IDM) :

36A

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

14.5ns

Pin Count :

8

Number of Pins :

8

Avalanche Energy Rating (Eas) :

100 mJ

Fall Time (Typ) :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

22m Ω @ 4.5A, 10V

Transistor Application :

SWITCHING

Number of Terminations :

8

Drain-source On Resistance-Max :

0.025Ohm

Turn-Off Delay Time :

23 ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

9A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

857pF @ 25V

Base Part Number :

STS9NH

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation-Max :

2.5W Tc

Vgs (Max) :

±16V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate to Source Voltage (Vgs) :

18V

ECCN Code :

EAR99