STS9P2UH7
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- Mfr.Part #
- STS9P2UH7
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 9A 8SO
- Stock
- 9,028
- In Stock ：
- 9,028
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2.7W Tc
- Packaging :
- Cut Tape (CT)
- Vgs (Max) :
- ±8V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 128 ns
- Weight :
- 506.605978mg
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 84.5 ns
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 8V
- Drain Current-Max (Abs) (ID) :
- 9A
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 4.5V
- Base Part Number :
- STS9P
- Operating Temperature :
- 150°C TJ
- Series :
- STripFET™
- Continuous Drain Current (ID) :
- 9A
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Turn On Delay Time :
- 12.5 ns
- Rds On (Max) @ Id, Vgs :
- 22.5m Ω @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Rise Time :
- 30.5ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2390pF @ 16V
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 20V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- STS9P2UH7
P-Channel Cut Tape (CT) 22.5m Ω @ 4.5A, 4.5V ±8V 2390pF @ 16V 22nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
STS9P2UH7 Overview
A device's maximum input capacitance is 2390pF @ 16V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 9A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 128 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.
STS9P2UH7 Features
a continuous drain current (ID) of 9A
the turn-off delay time is 128 ns
a 20V drain to source voltage (Vdss)
STS9P2UH7 Applications
There are a lot of STMicroelectronics
STS9P2UH7 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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